PDS3812 Key Features
- 30V,7.5A, RDS(ON) =20mΩ @VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- Part: PDS3812
- Manufacturer: Potens semiconductor
- Size: 393.09 KB
Related Potens semiconductor Datasheets
| Part Number | Description |
|---|---|
| PDS3810 | Dual N-Channel MOSFETs |
| PDS3805 | P-Channel MOSFETs |
| PDS3807 | P-Channel MOSFETs |
| PDS3808 | N-Channel MOSFETs |
| PDS3710 | N+P Channel MOSFETs |
PDS3812 Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.