PDS3812 mosfets equivalent, dual n-channel mosfets.
* 30V,7.5A, RDS(ON) =20mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* MB.
Dual SOP8 Pin Configuration D1
D2 D2 D1 D1
G1 G2
G2 S2 S1G1
G
S1
D2 S2
BVDSS 30V
RDSON 20m
ID 7.5A
Features .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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