Datasheet4U Logo Datasheet4U.com

PDS3812 - Dual N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,7.5A, RDS(ON) =20mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

📥 Download Datasheet

Datasheet preview – PDS3812

Datasheet Details

Part number PDS3812
Manufacturer Potens semiconductor
File Size 393.09 KB
Description Dual N-Channel MOSFETs
Datasheet download datasheet PDS3812 Datasheet
Additional preview pages of the PDS3812 datasheet.

📁 Similar Datasheet

  • PDS38W - Switching Diode (Prisemi)
  • PDS3100 - 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
  • PDS3100Q - 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)
  • PDS310W - Switching Diode (Prisemi)
  • PDS312W - Switching Diode (Prisemi)
  • PDS315W - Switching Diode (Prisemi)
  • PDS3200 - 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
  • PDS320W - Switching Diode (Prisemi)
  • PDS32W - Switching Diode (Prisemi)
  • PDS340 - 3A SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
30V Dual N-Channel MOSFETs PDS3812 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Dual SOP8 Pin Configuration D1 D2 D2 D1 D1 G1 G2 G2 S2 S1G1 G S1 D2 S2 BVDSS 30V RDSON 20m ID 7.5A Features  30V,7.
Published: |