PDS3808 datasheet, mosfets equivalent, Potens semiconductor

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Features and benefits

* 30V,9A, RDS(ON) =11mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Dual SOP8 Pin Configuration D2 D2 D1 D1 D1 G1 .

Application

BVDSS 30V RDSON 11m ID 9A Features
* 30V,9A, RDS(ON) =11mΩ@VGS = 10V
* Improved dv/dt capability
* Fas.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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