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PDS3808 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,9A, RDS(ON) =11mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available Dual SOP8 Pin Configuration D2 D2 D1 D1 D1 G1 G2 G1S2 S1 S1 G2.

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Datasheet Details

Part number PDS3808
Manufacturer Potens semiconductor
File Size 707.71 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDS3808 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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30V N-Channel MOSFETs PDS3808 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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