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Potens semiconductor

PDS3805 Datasheet Preview

PDS3805 Datasheet

P-Channel MOSFETs

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30V P-Channel MOSFETs
PDS3805
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
BVDSS
-30V
RDSON
16m
ID
-10A
Features
-30V,-10A, RDS(ON) =16mΩ@VGS = -10V
Fast switching
Green Device Available
Suit for -4.5V Gate Drive Applications
SOP8 Pin Configuration
D1D1 D2 D2
G1
D1
G2
Applications
D2 MB / VGA / Vcore
POL Applications
Load Switch
LED Application
S1G1S2G2
S1
S2
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage (base on IGSS1 condition)
Gate-Source Voltage (base on IGSS2 condition)
Drain Current – Continuous (TC=25)
Drain Current – Continuous (TC=100)
Drain Current – Pulsed1
Power Dissipation (TC=25)
Power Dissipation – Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Rating
-30
±20
±25
-10
-6.3
-40
2.1
0.017
-55 to 150
-55 to 150
Units
V
V
V
A
A
A
W
W/
Typ.
---
Max.
60
Unit
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PDS3805 Datasheet Preview

PDS3805 Datasheet

P-Channel MOSFETs

No Preview Available !

30V P-Channel MOSFETs
PDS3805
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS1
IGSS2
Gate-Source Leakage Current
Gate-Source Leakage Current
Conditions
VGS=0V , ID=-250uA
Reference to 25 , ID=-1mA
VDS=-30V , VGS=0V , TJ=25
VDS=-24V , VGS=0V , TJ=125
VGS=±20V , VDS=0V
VGS=±25V , VDS=0V
Min.
-30
---
---
---
---
---
Typ.
---
-0.03
---
---
---
---
Max.
---
---
-1
-10
±100
±1
Unit
V
V/
uA
uA
nA
mA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
VGS(th)
gfs
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Forward Transconductance
VGS=-10V , ID=-8A
VGS=-4.5V , ID=-6A
VGS=VDS , ID =-250uA
VDS=-10V , ID=-8A
--- 12 16 m
--- 18 26
-1.2 -1.6 -2.5
m
V
--- 4 --- mV/
--- 10.5 ---
S
Dynamic and switching Characteristics
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Total Gate Charge2 , 3
Gate-Source Charge2 , 3
Gate-Drain Charge2 , 3
Turn-On Delay Time2 , 3
Rise Time2 , 3
Turn-Off Delay Time2 , 3
Fall Time2 , 3
--- 14.6 21
VDS=-15V , VGS=-4.5V , ID=-8A
---
4.1
6
--- 6.3
9
nC
--- 9 17
VDD=-15V , VGS=-10V , RG=6--- 21.8 41
ID=-1A
--- 59.8 114
--- 14.4 27
ns
Ciss Input Capacitance
Coss Output Capacitance
VDS=-15V , VGS=0V , F=1MHz
--- 1730 2510
--- 180 260 pF
Crss Reverse Transfer Capacitance
--- 125 180
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width 300us , duty cycle 2%.
3. Essentially independent of operating temperature.
Min.
---
---
---
Typ.
---
---
---
Max.
-7
-14
-1
Unit
A
A
V
Potens semiconductor corp.
2
Ver.1.00


Part Number PDS3805
Description P-Channel MOSFETs
Maker Potens semiconductor
Total Page 5 Pages
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