PDS3805 Datasheet, Potens semiconductor

* -30V,-10A, RDS(ON) =16mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications SOP8 Pin Configuration D1D1 D2 .

BVDSS -30V RDSON 16m ID -10A Features
* -30V,-10A, RDS(ON) =16mΩ@VGS = -10V
* Fast switching
* Green D.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.