* -20V, -3A, RDS(ON) =85mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.8V Gate Drive Applications .

SOT23-6 Dual Pin Configuration D1 S1 D2 D1 D2 G1 S2 G2 G1 G2 S1 S2 BVDSS -20V RDSON 85m ID -3A Features

These dual P Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e.

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PDQ3909

PDQ3911

PDQ3912

PDQ4912

PDQE10

PD-20

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