PDQ0854-R datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* 100V,1.5A, RDS(ON) =330mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available SOT23-6-R Pin Configuration D1 D1 S2 D2 G1.

Application

BVDSS 100V RDSON 330m ID 1.5A Features
* 100V,1.5A, RDS(ON) =330mΩ @VGS = 10V
* Improved dv/dt capability .

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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