* 150V,1.4A, RDS(ON) =480mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed App
*licGaretieonnDsevice Available
* Netw.

SOT23-6 Pin Configuration D DS D DD G G S BVDSS 150V RDSON 480m ID 1.4A Features
* 150V,1.4A, RDS(ON) =48.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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