* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications Applications
* Notebook
* Load Switch
* Networking G2
* Han.

SOT23-6 Dual Pin Configuration D1 D1 S1 D2 G1 G G2 D2 Features
* Fast switching
* Green Device Available .

These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 100m 3.8A -2.5A provi.

+P

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PDQ3912

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PD-20

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