PDN2316S datasheet, mosfets equivalent, Potens semiconductor

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 505.61KB)

Features and benefits

* 20V, 5A, RDS(ON) =40mΩ@VGS = 4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications Appl.

Application

SOT23-3S Pin Configuration D D S G G S BVDSS 20V RDSON 40m ID 5A Features
* 20V, 5A, RDS(ON) =40mΩ@VGS = .

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

Image gallery