PDN2312S datasheet, mosfets equivalent, Potens semiconductor

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Features and benefits

* 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications Appli.

Application

SOT23-3S Pin Configuration D D S G G S BVDSS 20V RDSON 19m ID 6.7A Features
* 20V, 6.7A, RDS(ON)=19mΩ@VGS.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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