PDN2313S Datasheet, Potens semiconductor

* -20V,-4.1A, RDS(ON) =65mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.8V Gate Drive Applications.

SOT23-3S Pin Configuration D D S G G S BVDSS -20V RDSON 65mΩ ID -4.1A Features
* -20V,-4.1A, RDS(ON) =65mΩ@.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.