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Potens semiconductor

PDN2318S Datasheet Preview

PDN2318S Datasheet

N-Channel MOSFETs

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20V N-Channel MOSFETs
PDN2318S
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
D
D
S
G
G
S
BVDSS
20V
RDSON
65m
ID
4A
Features
20V, 4A, RDS(ON) =65mΩ@VGS = 4.5V
Improved dv/dt capability
Fast switching
Green Device Available
Suit for 1.8V Gate Drive Applications
Applications
Notebook
Load Switch
Hend-Held Instruments
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC=25)
Drain Current – Continuous (TC=100)
Drain Current – Pulsed1
Power Dissipation (TC=25)
Power Dissipation – Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
±10
4
2.5
16
1.56
0.012
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Typ.
---
Max.
80
Unit
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PDN2318S Datasheet Preview

PDN2318S Datasheet

N-Channel MOSFETs

No Preview Available !

20V N-Channel MOSFETs
PDN2318S
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=1mA
VDS=20V , VGS=0V , TJ=25
VDS=16V , VGS=0V , TJ=125
VGS=±10V , VDS=0V
Min.
20
---
---
---
---
Typ.
---
0.02
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/
uA
uA
nA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
VGS(th)
gfs
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Forward Transconductance
VGS=4.5V , ID=3A
VGS=2.5V , ID=2A
VGS=1.8V , ID=1A
VGS=VDS , ID =250uA
VDS=10V , IS=2A
--- 50 65
--- 60 80 m
--- 85 120
0.3 0.5
1
V
--- 2 --- mV/
--- 4.4 ---
S
Dynamic and switching Characteristics
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Total Gate Charge2 , 3
Gate-Source Charge2 , 3
Gate-Drain Charge2 , 3
Turn-On Delay Time2 , 3
Rise Time2 , 3
Turn-Off Delay Time2 , 3
Fall Time2 , 3
--- 3.6 7.2
VDS=10V , VGS=4.5V , ID=1A
--- 0.38 0.76 nC
--- 0.6 1.2
--- 1.8
5
VDD=10V , VGS=4.5V , RG=25--- 5.6 12
ID=1A
--- 11.3 24
nS
--- 3.2
7
Ciss Input Capacitance
--- 180 360
Coss Output Capacitance
VDS=15V , VGS=0V , F=1MHz
--- 32 64 pF
Crss Reverse Transfer Capacitance
--- 26 52
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width 300us , duty cycle 2%.
3. Essentially independent of operating temperature.
Min.
---
---
---
Typ.
---
---
---
Max.
4
8
1
Unit
A
A
V
Potens semiconductor corp.
2
Ver.1.00


Part Number PDN2318S
Description N-Channel MOSFETs
Maker Potens semiconductor
Total Page 5 Pages
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