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PDEQ2309 Datasheet, Potens semiconductor

PDEQ2309 mosfets equivalent, p-channel mosfets.

PDEQ2309 Avg. rating / M : 1.0 rating-13

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PDEQ2309 Datasheet

Features and benefits


* -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.8V Gate Drive Applications.

Application

SOT23-6L Pin Configuration DDS G D D G D S BVDSS -20V RDSON 33m ID -5.8A Features
* -20V,-5.8A, RDS(ON) =33.

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

Image gallery

PDEQ2309 Page 1 PDEQ2309 Page 2 PDEQ2309 Page 3

TAGS

PDEQ2309
P-Channel
MOSFETs
Potens semiconductor

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