PDEJ2210Z datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* 20V, 7.5A, RDS(ON)=15mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications
*.

Application

2928-J Dual Pin Configuration D1 D1 D2 D2 D1 D2 G1 G2 G2 S2 S1 G1 S1 S2 BVDSS 20V RDSON 15m ID 7.6A Features <.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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