PDD0959 datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* -100V,-30A, RDS(ON) 45mΩ@VGS = -10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* .

Application

TO252 Pin Configuration D D S G H G S BVDSS -100V RDSON 45m ID -30A Features
* -100V,-30A, RDS(ON) 45mΩ@V.

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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