PDD0903-1 datasheet, mosfets equivalent, Potens semiconductor

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Features and benefits

* -100V,-18A, RDS(ON) 95mΩ@VGS = -10V
* Improved dv/dt capability
* Fast switching
* 100% PB free and Green Device Available Applications
* Networkin.

Application

TO252 Pin Configuration D G S G D S BVDSS -100V RDSON 95m ID -18A Features
* -100V,-18A, RDS(ON) 95mΩ@VGS = .

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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