PDD0905 datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* -100V,-10A, RDS(ON) 210mΩ@VGS = -10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* Networking
* Load Swi.

Application

TO252 Pin Configuration D G S G D S PDD0905 BVDSS -100V RDSON 210m ID -10A Features
* -100V,-10A, RDS(ON) 2.

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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