PDD0956 mosfets equivalent, n-channel mosfets.
* 100V,12A , RDS(ON)=115mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* Netw.
TO252 Pin Configuration
D
S G
G
D S
BVDSS 100V
RDSON 115m
ID 12A
Features
* 100V,12A , RDS(ON)=115mΩ@VGS=1.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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