LNA2601L Datasheet Text
Infrared Light Emitting Diodes
GaAs Infrared Light Emitting Diode
Unit : mm
3.5±0.3 2.4 1.1 0.8 max. 1.1 0.8
For optical control systems Features
High-power output, high-efficiency Emitted light spectrum suited for silicon photodetectors Ultra-miniature, thin side-view type package Infrared light emission close to monochromatic light : λP = 950 nm
3.0±0.3
ø1.1 R0.5
1.95±0.25 1.4±0.2 0.9 0.5
12 min. Not Soldered 2.15...