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2SA886 - Silicon PNP epitaxial planar type Transistor

Features

  • PC  Ta 1.6.
  • 4.0.
  • 3.5 IC  VCE TC=25˚C IB=.
  • 40mA.
  • 35mA VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) IC/IB=10.
  • 10 Collector power dissipation PC (W) Collector current IC (A) 1.2.
  • 3.0.
  • 2.5.
  • 30mA.
  • 25mA.
  • 20mA.
  • 1 0.8.
  • 2.0.
  • 15mA.
  • 1.5.
  • 1.0.
  • 0.5.
  • 10mA.
  • 5mA TC=100˚C.
  • 0.1 0.4 25˚C.
  • 25˚C 0 0 40 80 120 160 0.

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Datasheet Details

Part number 2SA886
Manufacturer Panasonic
File Size 95.42 KB
Description Silicon PNP epitaxial planar type Transistor
Datasheet download datasheet 2SA886 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 φ 3.16±0.1 3.8±0.3 Unit: mm 8.0+0.5 –0.1 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −40 −5 −1.5 −3 1.2 150 −55 to +150 Unit V 4.6±0.2 0.75±0.1 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.
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