2SA838 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
q
High transition frequency fT. s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25˚C)
Ratings.
Full PDF Text Transcription for 2SA838 (Reference)
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2SA838. For precise diagrams, and layout, please refer to the original PDF.
Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q High transitio...
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o 2SC1359 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q High transition frequency fT. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings –30 –20 –5 –30 250 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 13.5±0.5 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.
2SA838 Datasheet
