Full PDF Text Transcription for 2SA886 (Reference)
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2SA886. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 φ 3.16±0.1 3.8±0.3 Unit: mm 8.0+0.5 –0...
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cation Complementary to 2SC1847 φ 3.16±0.1 3.8±0.3 Unit: mm 8.0+0.5 –0.1 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −40 −5 −1.5 −3 1.2 150 −55 to +150 Unit V 4.6±0.2 0.75±0.1 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.
2SA886 Datasheet
