High transfer ratio fT. /Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO -30 V
VCEO -20 V
VEBO
-5.0
V
IC -30 mA
PC 250 mW
Tj 150 ℃
Tstg -55～150 ℃
/Electrical characteristics(Ta=25℃)
Symbol
Test condition
ICBO ICEO IEBO hFE VCE(sat) VBE fT NF Zrb Cre
VCB=-10V
IE=0
VCE=-20V
IB=0
VEB=-5.0V
IC=0
VCE=-10V
IC=-1.0mA
IC=-10mA
IB=-1.0mA
VCE=-10V
IC=-1.0mA
VCB=-10V IE=1.0mA f=200MHz
VCB=-10V IE=1.0mA f=5.0MHz
VCE=-10V IC=-1.0mA f=2.0MHz
VCE=-10V IC=-1.0mA.
Full PDF Text Transcription for 2SA838 (Reference)
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2SA838. For precise diagrams, and layout, please refer to the original PDF.
2SA838(3CG838) PNP /SILICON PNP TRANSISTOR ：， 2SC1359(3DG1359)。 Purpose: For low-frequency amplification, complementary to 2SC1359(3DG1359). :。 Features: High transfer ra...
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tion, complementary to 2SC1359(3DG1359). :。 Features: High transfer ratio fT. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -20 V VEBO -5.0 V IC -30 mA PC 250 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO ICEO IEBO hFE VCE(sat) VBE fT NF Zrb Cre VCB=-10V IE=0 VCE=-20V IB=0 VEB=-5.0V IC=0 VCE=-10V IC=-1.0mA IC=-10mA IB=-1.0mA VCE=-10V IC=-1.0mA VCB=-10V IE=1.0mA f=200MHz VCB=-10V IE=1.0mA f=5.0MHz VCE=-10V IC=-1.0mA f=2.0MHz VCE=-10V IC=-1.0mA f=10.7MHz Min 70 150 Rating Typ -0.1 -0.7 300 2.8 22 1.2 Max -0.1 -100 -10 220 4.0 50 2.
2SA838 Datasheet
