FDS6675BZ Overview
Key Specifications
Package: SOIC
Mount Type: Surface Mount
Pins: 8
Height: 1.5 mm
Description
This P-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Key Features
- Max RDS(on) = 13 mW at VGS = -10 V, ID = -11 A
- Max RDS(on) = 21.8 mW at VGS = -4.5 V, ID = -9 A
- Extended VGS Range (-25 V) for Battery Applications
- HBM ESD Protection Level of 5.4 kV Typical (Note
- High Performance Trench Technology for Extremely Low RDS(on)
