FDS6675BZ
Description
This P-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance.
Key Features
- Max RDS(on) = 13 mW at VGS = -10 V, ID = -11 A
- Max RDS(on) = 21.8 mW at VGS = -4.5 V, ID = -9 A
- Extended VGS Range (-25 V) for Battery Applications
- HBM ESD Protection Level of 5.4 kV Typical (Note 3)
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- This Device is Pb-Free and RoHS pliant Specifications
