FDS6675BZ Key Features
- Max RDS(on) = 13 mW at VGS = -10 V, ID = -11 A
- Max RDS(on) = 21.8 mW at VGS = -4.5 V, ID = -9 A
- Extended VGS Range (-25 V) for Battery
- Part: FDS6675BZ
- Description: P-Channel MOSFET
- Manufacturer: onsemi
- Size: 320.27 KB
Other FDS6675BZ Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild Semiconductor |
FDS6675BZ | P-Channel PowerTrench MOSFET |
|
Fairchild Semiconductor |
FDS6675 | Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET |
|
Fairchild Semiconductor |
FDS6675A | 30V P-Channel PowerTrench MOSFET |