FDS6675BZ
FDS6675BZ is P-Channel MOSFET manufactured by onsemi.
Description
This P-Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max RDS(on) = 13 m W at VGS =
- 10 V, ID =
- 11 A
- Max RDS(on) = 21.8 m W at VGS =
- 4.5 V, ID =
- 9 A
- Extended VGS Range (- 25 V) for Battery Applications
- HBM ESD Protection Level of 5.4 k V Typical (Note 3)
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- This Device is Pb-Free and Ro HS pliant
Specifications
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current
- Continuous (Note 1a)
- Pulsed
- 30
±25
- 11
- 55
Power Dissipation for Single Operation
(Note...
