FDS6675BZ datasheet, mosfet equivalent, On Semiconductor

Features and benefits

* Max RDS(on) = 13 mW at VGS = −10 V, ID = −11 A
* Max RDS(on) = 21.8 mW at VGS = −4.5 V, ID = −9 A
* Extended VGS Range (−25 V) for Battery Applications
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Application

common in Notebook Computers and Portable Battery Packs. Features
* Max RDS(on) = 13 mW at VGS = −10 V, ID = −11 A <.

Description

This P−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in N.

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