FDS6675BZ Description
This P-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDS6675BZ Key Features
- Max RDS(on) = 13 mW at VGS = -10 V, ID = -11 A
- Max RDS(on) = 21.8 mW at VGS = -4.5 V, ID = -9 A
- Extended VGS Range (-25 V) for Battery