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MOSFET – P-Channel, POWERTRENCH)
-30 V, -11 A, 13 mW
FDS6675BZ
Description This P-Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
• Max RDS(on) = 13 mW at VGS = −10 V, ID = −11 A • Max RDS(on) = 21.8 mW at VGS = −4.5 V, ID = −9 A • Extended VGS Range (−25 V) for Battery Applications • HBM ESD Protection Level of 5.
FDS6675BZ Datasheet
