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DATA SHEET www.onsemi.com
MOSFET - Power, Single N-Channel, DFN5/DFNW5
30 V, 4.8 mW, 55 A
NVMFS4C308N
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C308NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Reverse Battery Protection • DC−DC Converters Output Driver
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJA (Notes 1, 2)
TA = 25°C
TA = 100°C
ID
17.2
A
12.
NVMFS4C308N Datasheet
