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DATA SHEET www.onsemi.com
MOSFET - Power, Single N-Channel, DFN5
30 V, 3.4 mW, 71 A
NVMFS4C306N
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC-Q101 Qualified and PPAP Capable • NVMFS4C306NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Reverse Battery Protection • DC-DC Converters Output Driver
MAXIMUM RATINGS (TJ = 25 °C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current RqJA (Notes 1, 2)
VDSS
30
V
VGS
±20
V
TA = 25 °C
ID
20.6
A
TA = 100 °C
14.
NVMFS4C306N Datasheet
