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NVMFS4C03N
MOSFET – Power, Single N-Channel, Logic Level, SO-8FL
30 V, 1.7 mW, 159 A
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C03NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
"20 V
Continuous Drain Cur-
TC = 25°C
ID
rent RqJC (Notes 1, 2,
3)
Steady
State
Power Dissipation
TC = 25°C
PD
RqJC (Notes 1, 2)
159
A
77
W
Continuous Drain Cur-
TA = 25°C
ID
34.
NVMFS4C03N Datasheet
