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DATA SHEET www.onsemi.com
MOSFET – Power, Single
N-Channel, SO-8 FL
30 V, 127 A
NVMFS4C05N,
NVMFS4C305N
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Notes 1, 2 and 4)
VDSS
30
V
VGS
±20
V
TA = 25°C
TA = 80°C
ID
27.2
A
21.6
Power Dissipation RqJA (Notes 1, 2 and 4)
TA = 25°C PD
3.
NVMFS4C05N Datasheet
