NVHL072N65S3 mosfet equivalent, n-channel mosfet.
* AEC−Q101 Qualified
* Max Junction Temperature 150°C
* Typ. RDS(on) = 61 mΩ
* Ultra Low Gate Charge (Typ. QG = 82 nC)
* Low Effective Output Capacita.
* Automotive PHEV−BEV DC−DC Converter
* Automotive Onboard Charger for PHEV−BEV
DATA SHEET www.onsemi.com
BVDS.
SuperFET III MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize.
Image gallery
TAGS
Download