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NVHL020N120SC1 - N-Channel MOSFET

Datasheet Summary

Features

  • Typ. RDS(on) = 20 mW.
  • Ultra Low Gate Charge (typ. QG(tot) = 203 nC).
  • Low Effective Output Capacitance (typ. Coss = 260 pF).
  • 100% UIL Tested.
  • Qualified According to AEC.
  • Q101.
  • These Devices are RoHS Compliant Typical.

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Datasheet preview – NVHL020N120SC1

Datasheet Details

Part number NVHL020N120SC1
Manufacturer ON Semiconductor
File Size 233.28 KB
Description N-Channel MOSFET
Datasheet download datasheet NVHL020N120SC1 Datasheet
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MOSFET - SiC Power, Single N-Channel NVHL020N120SC1 1200 V, 20 mW, 103 A Features • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (typ. QG(tot) = 203 nC) • Low Effective Output Capacitance (typ.
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