Datasheet4U Logo Datasheet4U.com

NVHL040N65S3F - N-Channel MOSFET

Datasheet Summary

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 33.8 mW.
  • Ultra Low Gate Charge (Typ. Qg = 153 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 1333 pF).
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.

📥 Download Datasheet

Datasheet preview – NVHL040N65S3F

Datasheet Details

Part number NVHL040N65S3F
Manufacturer ON Semiconductor
File Size 373.36 KB
Description N-Channel MOSFET
Datasheet download datasheet NVHL040N65S3F Datasheet
Additional preview pages of the NVHL040N65S3F datasheet.

📁 Similar Datasheet

  • NVH820S75L4SPB - Automotive 820A Single Side Direct Cooling 6-Pack Power Module (onsemi)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
NVHL040N65S3F MOSFET – Power, N-Channel, SUPERFET) III, FRFET) 650 V, 65 A, 40 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 33.8 mW • Ultra Low Gate Charge (Typ.
Published: |