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NVHL045N065SC1 - SiC MOSFET

Datasheet Summary

Features

  • Typ. RDS(on) = 32 mW @ VGS = 18 V Typ. RDS(on) = 42 mW @ VGS = 15 V.
  • Ultra Low Gate Charge (QG(tot) = 105 nC).
  • High Speed Switching with Low Capacitance (Coss = 162 pF).
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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Full PDF Text Transcription

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Silicon Carbide (SiC) MOSFET – 32 mohm, 650 V, M2, TO-247-3L NVHL045N065SC1 Features • Typ. RDS(on) = 32 mW @ VGS = 18 V Typ.
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