• Part: NTBG020N120SC1
  • Description: SiC MOSFET
  • Manufacturer: onsemi
  • Size: 341.75 KB
Download NTBG020N120SC1 Datasheet PDF
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NTBG020N120SC1 Key Features

  • Typ. RDS(on) = 20 mW
  • Ultra Low Gate Charge (QG(tot) = 220 nC)
  • High Speed Switching with Low Capacitance (Coss = 258 pF)
  • 100% Avalanche Tested
  • TJ = 175°C
  • This Device is Halide Free and RoHS pliant with exemption 7a

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