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NTBG020N120SC1 Datasheet ON Semiconductor

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File Size : 341.75KB · NTBG020N120SC1 Avg. rating / M : star-12

Features and Benefits


• Typ. RDS(on) = 20 mW
• Ultra Low Gate Charge (QG(tot) = 220 nC)
• High Speed Switching with Low Capacitance (Coss = 258 pF)
• 100% Avalanche Tested
• TJ = 175°C
• This Device is Halide Free and RoHS.

NTBG020N120SC1 NTBG020N120SC1 NTBG020N120SC1
TAGS
SiC
MOSFET
NTBG020N120SC1
NTBG020N090SC1
NTBG025N065SC1

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