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NTBG020N120SC1 - SiC MOSFET

Features

Typ. RDS(on) = 20 mW.
Ultra Low Gate Charge (QG(tot) = 220 nC).
High Speed Switching with Low Capacitance (Coss = 258 pF).
100% Avalanche Tested.
TJ = 175°C.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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NTBG020N120SC1 SiC MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – NTBG020N120SC1

Datasheet Details

Part number	NTBG020N120SC1
Manufacturer	onsemi
File Size	341.75 KB
Description	SiC MOSFET
Datasheet	NTBG020N120SC1 Datasheet
Additional preview pages of the NTBG020N120SC1 datasheet.

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L NTBG020N120SC1 Features • Typ.

Published: Apr 15, 2020 |