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NSVMMBD352WT1G Datasheet Dual Schottky Barrier Diode

Manufacturer: onsemi

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Overview

MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.

Key Features

  • Very Low Capacitance.
  • Less Than 1.0 pF @ 0 V.
  • Low Forward Voltage.
  • 0.5 V (Typ) @ IF = 10 mA.
  • AEC Qualified and PPAP Capable.
  • NSV Prefix for Automotive and Other.

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