NSVMMBD354LT1G Datasheet PDF - ON Semiconductor Dual Hot Carrier Mixer Diodes Specs

NSVMMBD354LT1G - Dual Hot Carrier Mixer Diodes

This page provides the datasheet information for the NSVMMBD354LT1G, a member of the NSVMMBD353LT1G Dual Hot Carrier Mixer Diodes family.

Datasheet Summary

Description

SOT 23 (TO

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Features

Very Low Capacitance.
Less Than 1.0 pF @ Zero V.
Low Forward Voltage.
0.5 V (Typ) @ IF = 10 mA.
NSV Prefix for Automotive and Other.

Datasheet Details

Part number	NSVMMBD354LT1G
Manufacturer	ON Semiconductor
File Size	230.01 KB
Description	Dual Hot Carrier Mixer Diodes
Datasheet	NSVMMBD354LT1G Datasheet
Additional preview pages of the NSVMMBD354LT1G datasheet.

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Full PDF Text Transcription

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MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ Zero V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Continuous Reverse Voltage VR 7.0 VCC Stresses exceeding those listed in the Maximum Ratings table may damage the device.

Published: Oct 18, 2016 |