HGT1S7N60A4S9A - N-Channel IGBT

ON Semiconductor

Datasheet Details

Part number	HGT1S7N60A4S9A
Manufacturer	ON Semiconductor ↗
File Size	246.74 KB
Description	N-Channel IGBT
Datasheet	HGT1S7N60A4S9A-ONSemiconductor.pdf

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching.

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Published: Oct 2, 2022 |