of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequen.

HGT1S7N60A4S

HGT1S7N60A4DS

HGT1S7N60B3DS

HGT1S7N60B3S

HGT1S7N60C3D

HGT1S7N60C3DS

HGT1S10N120BNS

HGT1S11N120CNS

HGT1S12N60A4DS

HGT1S12N60A4S

HGT1S12N60A4S9A

HGT1S12N60B3DS

HGT1S12N60B3S

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts