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HGT1S7N60B3DS - 14A 600V UFS Series N-Channel IGBT

Features

  • of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057). The IGBT is ideal for many high voltage switching.

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Datasheet Details

Part number HGT1S7N60B3DS
Manufacturer Intersil Corporation
File Size 94.32 KB
Description 14A 600V UFS Series N-Channel IGBT
Datasheet download datasheet HGT1S7N60B3DS Datasheet
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HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 File Number 4413.2 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057).
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