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HGT1S7N60C3DS - UFS Series N-Channel IGBT

This page provides the datasheet information for the HGT1S7N60C3DS, a member of the HGTP7N60C3D UFS Series N-Channel IGBT family.

Description

The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best

Features

  • 14A, 600V at TC = 25oC.
  • 600V Switching SOA Capability.
  • Typical Fall Time.
  • . . . . 140ns at TJ = 150oC.
  • Short Circuit Rating.
  • Low Conduction Loss.
  • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB.

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Datasheet preview – HGT1S7N60C3DS

Datasheet Details

Part number HGT1S7N60C3DS
Manufacturer HARRIS
File Size 196.80 KB
Description UFS Series N-Channel IGBT
Datasheet download datasheet HGT1S7N60C3DS Datasheet
Additional preview pages of the HGT1S7N60C3DS datasheet.

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Full PDF Text Transcription

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HGTP7N60C3D, HGT1S7N60C3D, SEMICONDUCTOR HGT1S7N60C3DS January 1997 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features • 14A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Description The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
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