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HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3
June 1996
14A, 600V, UFS Series N-Channel IGBT
Features
• 14A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 140ns at TJ = +150oC • Short Circuit Rating
• Low Conduction Loss
Description
The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
HGTD7N60C3S Datasheet
