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HGTG18N120BND - IGBT

Description

HGTG18N120BND is based on Non

designs.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

Features

  • 26 A, 1200 V, TC = 110°C.
  • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A.
  • Typical Fall Time.
  • . . . 140 ns at TJ = 150°C.
  • Short Circuit Rating.
  • Low Conduction Loss.
  • This Device is Pb.
  • Free www. onsemi. com C G E E C G TO.
  • 247.
  • 3LD CASE 340CK.

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IGBT - NPT 1200 V HGTG18N120BND Description HGTG18N120BND is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies. Features • 26 A, 1200 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A • Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • This Device is Pb−Free www.onsemi.com C G E E C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K 18N120BND © Semiconductor Components Industries, LLC, 2001 February, 2020 − Rev.
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