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HGTG11N120CN - N-Channel IGBT

Features

  • of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching.

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Datasheet Details

Part number HGTG11N120CN
Manufacturer Intersil Corporation
File Size 81.89 KB
Description N-Channel IGBT
Datasheet download datasheet HGTG11N120CN Datasheet
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HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet January 2000 File Number 4577.2 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49291.
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