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HGTG18N120BN - NPN IGBT

Description

HGTG18N120BN is based on Non

designs.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

Features

  • 26 A, 1200 V, TC = 110°C.
  • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A.
  • Typical Fall Time.
  • . . . 140 ns at TJ = 150°C.
  • Short Circuit Rating.
  • Low Conduction Loss.
  • This Device is Pb.
  • Free www. onsemi. com C G E E C G TO.
  • 247.
  • 3LD CASE 340CK.

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IGBT - NPT 1200 V HGTG18N120BN Description HGTG18N120BN is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies. Features • 26 A, 1200 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A • Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • This Device is Pb−Free www.onsemi.com C G E E C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K G18N120BN © Semiconductor Components Industries, LLC, 2001 February, 2020 − Rev.
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