FDT457N mosfet equivalent, n-channel mosfet.
* 5 A, 30 V
RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.5 V
* High Density Cell Design for Extremely Low RDS(ON)
* High Power and Current Handli.
such as notebook computer power management, battery powered circuits, and DC motor control.
Features
* 5 A, 30 V
RDS.
These N−Channel enhancement mode power field effect transistors
are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance, provide superior switc.
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