FDT439N datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* 6.3 A, 30 V RDS(on) = 0.045 W @ VGS = 4.5 V RDS(on) = 0.058 W @ VGS = 2.5 V
* Fast switching speed.
* High power and current handling capability in a widely.

Application

such as notebook computer power management, battery powered circuits, and DC motor control. Features
* 6.3 A, 30 V R.

Description

This N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance and provide superior switc.

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