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FDT434P - P-Channel MOSFET

General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Overview

FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench.

Key Features

  • 5.5 A,.
  • 20 V. RDS(ON) = 0.050 Ω @ VGS =.
  • 4.5 V RDS(ON) = 0.070 Ω @ VGS =.
  • 2.5 V.
  • Low gate charge (13nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package.