FDS8958B mosfet equivalent, dual n & p-channel power mosfet.
Q1: N-Channel
* Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A
* Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A
Q2: P-Channel
* Max rDS(on) = 51 mΩ at VGS = -1.
where low in-line power loss and fast switching are required.
Application
* DC-DC Conversion
* BLU and motor dri.
These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching pe.
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