FDS8958 Datasheet | Fairchild Semiconductor

Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. - - Features - Q1: N-Channel RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V - Q2: P-Channel RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package 7.0A, 30V -5A, -30V D1 D D1 D DD2 D2 D 5 6 Q2 4 3 Q1 SO-8 Pin 1 SO-8 G1 S1 S G2 S2 G 7 8 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Q1 (Note 1a) Q2 30 ±20 -5 -20 2 1.6 1 0.9 -55 to +150 Units - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation ±20 7 20 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature...