FDS8958 - Dual N & P-Channel PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDS8958
Manufacturer	Fairchild Semiconductor
File Size	269.29 KB
Description	Dual N & P-Channel PowerTrench MOSFET
Datasheet	FDS8958 Datasheet
Additional preview pages of the FDS8958 datasheet.

Product details

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

Features

Q1: N-Channel RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V.
Q2: P-Channel RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package 7.0A, 30V -5A, -30V D1 D D1 D DD2 D2 D 5 6 Q2 4 3 Q1 SO-8 Pin 1 SO-8 G1 S1 S G2 S2 G 7 8 2 1 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless oth.

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Published: Jan 25, 2008 |