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FDS8958 Datasheet, Fairchild Semiconductor

FDS8958 mosfet equivalent, dual n & p-channel powertrench mosfet.

FDS8958 Avg. rating / M : 1.0 rating-16

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FDS8958 Datasheet

Features and benefits


* Q1: N-Channel RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V
* Q2: P-Channel RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V Fast switc.

Application

where low in-line power loss and fast switching are required.
*
* Features
* Q1: N-Channel RDS(on) = 0.028Ω.

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switchin.

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TAGS

FDS8958
Dual
P-Channel
PowerTrench
MOSFET
FDS8958A
FDS8958A-F085
FDS8958A_F085
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor
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