FDS8958 Datasheet Dual N & P-Channel PowerTrench MOSFET

Manufacturer: Fairchild (now onsemi)

FDS8958 dual n & p-channel powertrench mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDS8958
Manufacturer	Fairchild (now onsemi)
File Size	269.29 KB
Description	Dual N & P-Channel PowerTrench MOSFET
Download	FDS8958 Download (PDF)

General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

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Overview

www.DataSheet4U.com FDS8958 October 2004 FDS8958 Dual N & P-Channel PowerTrench®.

Key Features

Q1: N-Channel RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V.
Q2: P-Channel RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package 7.0A, 30V -5A, -30V D1 D D1 D DD2 D2 D 5 6 Q2 4 3 Q1 SO-8 Pin 1 SO-8 G1 S1 S G2 S2 G 7 8 2 1 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless oth.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	FDS8958A-F085	Dual N&P-Channel MOSFET	ON Semiconductor
	FDS8958B	Dual N & P-Channel Power MOSFET	ON Semiconductor

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