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FDS8958A Dual-Channel MOSFET

FDS8958A Description

FDS8958A April 2008 FDS8958A tm Dual N & P-Channel PowerTrench® MOSFET General .
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process.

FDS8958A Features

* Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V
* Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V
* Fast switching speed
* High power and handling capability in a widely used surface mount packa

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Dual-Channel MOSFET Fairchild Semiconductor
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