FDS8958B datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

Q1: N-Channel
* Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A
* Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel
* Max rDS(on) = 51 mΩ at VGS = -1.

Application

where low in-line power loss and fast switching are required. Application
* RoHS Compliant
* DC-DC Conversion .

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switc.

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