Datasheet4U Logo Datasheet4U.com

FDS6699S Datasheet N-Channel MOSFET

Manufacturer: onsemi

Overview: SyncFETt – N-Channel, POWERTRENCH) 30 V, 21 A, 3.6 mW FDS6699S General.

📥 Download Datasheet

General Description

The FDS6699S is designed to replace a single SO−8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge.

The FDS6699S includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.

Key Features

  • 21 A, 30 V.
  • Max RDS(on) = 3.6 mW at VGS = 10 V.
  • Max RDS(on) = 4.5 mW at VGS = 4.5 V.
  • Includes SyncFET Schottky Body Diode.
  • High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching.
  • High Power and Current Handling Capability.
  • 100% RG (Gate Resistance) Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

FDS6699S Distributor & Price

Compare FDS6699S distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDS6699S MOSFET Fairchild Semiconductor

More Datasheets from onsemi

Part Number Description
FDS6690A N-Channel MOSFET
FDS6690AS N-Channel MOSFET
FDS6612A N-Channel MOSFET
FDS6673BZ P-Channel MOSFET
FDS6673BZ-F085 P-Channel MOSFET
FDS6675 P-Channel MOSFET
FDS6675BZ P-Channel MOSFET
FDS6676AS N-Channel MOSFET
FDS6676AS-G N-Channel MOSFET
FDS6679AZ P-Channel MOSFET