| Description | The FDS6699S is designed to replace a single SO−8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge. The FDS6699S includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology. Features • 21 A, 30 V ♦ Max RDS(on) = 3.6 mW at VGS = 10 V ♦ Max RDS(on) = ... |
| Features |
• 21 A, 30 V ♦ Max RDS(on) = 3.6 mW at VGS = 10 V ♦ Max RDS(on) = 4.5 mW at VGS = 4.5 V • Includes SyncFET Schottky Body Diode • High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching • High Power and Current Handling Capability • 100% RG (Gate Resistance) Tested • These Devices are Pb−Free and are RoHS Compliant Applicatio... |
| Datasheet |
 FDS6699S Datasheet - 197.93KB |
