FDS6699S
Description
The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge.
Key Features
- 21 A, 30 V
- Max RDS(on) = 3.6 mW at VGS = 10 V
- Max RDS(on) = 4.5 mW at VGS = 4.5 V
- Includes SyncFET Schottky Body Diode
- High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching
- High Power and Current Handling Capability
- 100% RG (Gate Resistance) Tested
- These Devices are Pb-Free and are RoHS Compliant
