FDS6699S - N-Channel MOSFET

ON Semiconductor

Datasheet Details

The FDS6699S is designed to replace a single SO. 8.

21 A, 30 V.
Max RDS(on) = 3.6 mW at VGS = 10 V.
Max RDS(on) = 4.5 mW at VGS = 4.5 V.
Includes SyncFET Schottky Body Diode.
High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching.
High Power and Current Handling Capability.
100% RG (Gate Resistance) Tested.
These Devices are Pb.
Free and are RoHS Compliant.

📁 Related Datasheet

FDS6690 - Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET (Fairchild Semiconductor)
FDS6690A - Single N-Channel / Logic Level / PowerTrench MOSFET (Fairchild Semiconductor)
FDS6690AS - 30V N-Channel PowerTrench SyncFET (Fairchild Semiconductor)
FDS6690S - 30V N-Channel PowerTrench SyncFET (Fairchild Semiconductor)
FDS6692 - 30V N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDS6692A - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDS6694 - 30V N-Channel Fast Switching PowerTrench MOSFET (Fairchild Semiconductor)
FDS6609A - P-Channel Logic Level PowerTrench MOSFET (Fairchild Semiconductor)

📌 All Tags

ON Semiconductor FDS6699S-like datasheet

FDS6699S Stock/Price