FDS6679AZ datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
* Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
* Extended VGS range (-25V) for battery applications
* HBM.

Application

common in Notebook Computers and Portable Battery Packs. Features
* Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A

Description

This P-Channel MOSFET is producted using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in .

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