FDS6679AZ mosfet equivalent, p-channel mosfet.
* Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
* Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
* Extended VGS range (-25V) for battery applications
* HBM.
common in Notebook Computers and Portable Battery Packs.
Features
* Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
This P-Channel MOSFET is producted using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in .
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